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Applied Physics Letters : The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

By Monica Sawkar-Mathur, Ya-Chuan Perng, Jun Lu, Hans-Olof Blom, John Bargar et al

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Book Id: WPLBN0002169256
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 9 December 2008

Title: Applied Physics Letters : The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge  
Author: Monica Sawkar-Mathur, Ya-Chuan Perng, Jun Lu, Hans-Olof Blom, John Bargar et al
Volume: Issue : December 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Applied Physics Letters Collection
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Publication Date:
Publisher: American Institute of Physics

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Ya-Chuan Perng, Jun Lu, Hans-Olof Blom, John Bargar Et A, M. S. (n.d.). Applied Physics Letters : The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge. Retrieved from http://community.worldlibrary.net/


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Description: Hafnium aluminate thin films were synthesized by atomic layer deposition (ALD) to assess the effect of aluminum oxide incorporation on the dielectric/Ge interfacial properties. In these HfxAlyOz thin films, the Hf to Al cation ratio was effectively controlled by changing the ratio of hafnium oxide to aluminum oxide ALD cycles, while their short range order was changed upon increasing aluminum oxide incorporation, as observed by extended x-ray absorption fine structure analysis. The incorporation of aluminum oxide was shown to improve the electrical characteristics of hafnium oxide/Ge devices, including lower interface state densities and leakage current densities.

 

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